parameter symbol typ unit repetitive peak off-state voltages v drm v rrm 650 v average on-state current i t(av) 7.5 a rms on-state current i t(rms) 12 a non-repetitive peak on-state current i tsm 120 a max. operating junction temperature t j 110 o c storage temperature t stg -45~150 o c BT151-650R general description parameter symbol test conditions min typ max unit repetitive peak off-state voltages v drm v rrm 650 v average on-state current i t(av) half sine wave; t mb < 103 o c 7.5 a rms on-state current i t(rms) all conduction angles 12 a on-state voltage v t i t =20a 1.4 1.75 v holding current i h v d =12 v; i gt = 0.1 a 7.5 30 ma latching current i l v d =12 v; i gt = 0.1 a 10 45 ma gate trigger current i gt v d =12 v; i t = 0.1 a 3 30 ma gate trigger voltage v gt v d =12 v; i t = 0.1 a 0.6 1.5 v triacs sensitive gate glass passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial and domestic lighting, heating and static switching. product specification to-220 absolute maximum ratings electrical characteristics ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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